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| UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to S8550 TO-92 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25C) Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG VALUE 30 20 5 1 700 150 -65 ~ +150 UNIT V V V W mA C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob TEST CONDITIONS Ic=100A,IE=0 Ic=1mA,IB=0 IE=100A,Ic=0 VCB=30V,IE=0 VEB=5V,Ic=0 VCE=1V,Ic=1mA VCE=1V,Ic=150 mA VCE=1V,Ic=500mA Ic=500mA,IB=50mA Ic=500mA,IB=50mA VCE=1V,Ic=10mA VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz MIN 30 20 5 TYP MAX UNIT V V V A nA 1 100 100 120 40 110 400 0.5 1.2 1.0 100 9.0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance V V V MHz pF UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-013,A UTC S8050 RANK RANGE NPN EPITAXIAL SILICON TRANSISTOR C 120-200 D 160-300 E 280-400 CLASSIFICATION OF hFE2 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics 0.5 Fig.2 DC current Gain 3 10 2 10 Fig.3 Base-Emitter on Voltage IB=3.0mA IB=2.5mA IB=2.0mA Ic,Collector current (mA) Ic,Collector current (mA) VCE=1V HFE, DC current Gain 0.4 VCE=1V 1 10 2 10 0.3 IB=1.5mA 0.2 IB=1.0mA IB=0.5mA 1 10 0 10 0.1 0 0 0.4 0.8 1.2 1.6 2.0 0 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 0.2 0.4 0.6 0.8 1.0 Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage 4 10 3 10 Fig.5 Current gain-bandwidth product 3 10 Fig.6 Collector output Capacitance Cob,Capacitance (pF) Ic=10*IB VBE(sat) 3 10 Current Gain-bandwidth product,fT(MHz) Saturation voltage (mV) VCE=10V 2 10 2 10 f=1MHz IE=0 2 10 1 10 1 10 VCE(sat) 1 10 -1 10 0 10 1 10 2 10 3 10 0 10 0 10 1 10 2 10 3 10 0 10 0 10 1 10 2 10 3 10 Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-013,A |
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